Synthesis, Crystal Structure and Fluorescent Properties of New Layered Thiophosphate Cs2Ga3PS8

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摘要

A new quaternary metal thiophosphate, Cs2Ga3PS8, in triclinic P space group has been successfully synthesized by a reactive-flux method. Its structural framework is derived from well-known AMIIIMIVQ4 (A = alkali metal; MIII = Al, Ga, In; MIV = Si, Ge, Sn; Q = S, Se) system and composed of two-dimensional 2 ∞[Ga3PS8]2– layers separated by Cs+. The compound exhibits a wide band gap of 3.08 eV and congruent-melting behavior with melt point of 645 ℃. Interestingly, Cs2Ga3PS8 exhibits a broad photoluminescent emission band at 420 nm upon excitation at 295 nm. Moreover, electronic structure calculations indicate that Cs2Ga3PS8 is a direct band gap compound and its luminescent process can be mainly ascribed to electron transfer from the S-3p and Ga-4p states to S-3p and P-3p.

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	陈文发
	刘彬文
	姜小明
	郭国聪

关键词 ： chalcogenide, thiophosphate, crystal structure, solid-state phase, synthesis

Abstract：

Key words： chalcogenide thiophosphate crystal structure solid-state phase synthesis

收稿日期: 2021-02-07 出版日期: 2021-10-11

基金资助:This work was supported by the NSF of China (21827813, 21921001, 22075283), Scientific Research Fund of Natural Science Foundation of Fujian Province (2020J01115) and the Youth Innovation Promotion Association of CAS (No. 20200303)

通讯作者: gcguo@fjirsm.ac.cn and xmjiang@fjirsm.ac.cn E-mail: gcguo@fjirsm.ac.cn and xmjiang@fjirsm.ac.cn

引用本文:

陈文发;刘彬文;姜小明;郭国聪. Synthesis, Crystal Structure and Fluorescent Properties of New Layered Thiophosphate Cs₂Ga₃PS₈[J]. 结构化学, 2021, 40(10): 1271-1276.
CHEN Wen-Fa;LIU Bin-Wen;JIANG Xiao-Ming;GUO Guo-Cong. Synthesis, Crystal Structure and Fluorescent Properties of New Layered Thiophosphate Cs₂Ga₃PS₈. CHINESE JOURNAL OF STRUCTURAL CHEMISTRY, 2021, 40(10): 1271-1276.

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http://manu30.magtech.com.cn/jghx/CN/ 或 http://manu30.magtech.com.cn/jghx/CN/Y2021/V40/I10/1271

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