摘要In this paper, potassium dihydrogen phosphate (KDP) crystals were grown in the presence of a series of silicate (SiO32-) impurity concentrations via conventional temperature cooling and rapid growth methods, respectively. It revealed that the SiO32- impurity could lead to the decrease of transmittance at the region of ultraviolet band for pyramidal sectors and slightly increased the transmittance for prismatic sectors. SiO32- could enter into the crystal lattice and created lattice defects, which consequently increased the density of light scatter. The decrease of laser damage threshold was attributed to the lattice defects and the redundant electrons brought by the replacement of SiO32- at the PO43-position.
Abstract：In this paper, potassium dihydrogen phosphate (KDP) crystals were grown in the presence of a series of silicate (SiO32-) impurity concentrations via conventional temperature cooling and rapid growth methods, respectively. It revealed that the SiO32- impurity could lead to the decrease of transmittance at the region of ultraviolet band for pyramidal sectors and slightly increased the transmittance for prismatic sectors. SiO32- could enter into the crystal lattice and create lattice defects, which consequently increased the density of light scatter. The decrease of laser damage threshold was attributed to the lattice defects and the redundant electrons brought by the replacement of SiO32- at thePO43-position.
丁建旭;卢永强;王圣来;顾庆天;许心光;王正平. Influence of SiO32- Impurity on the Optical Properties of KDP Crystal[J]. , 2012, 31(1): 105-109.
DING Jian-Xu;LU Yong-Qiang;WANG Sheng-Lai;GU Qing-Tian;XU Xin-Guang;WANG Zheng-Ping. Influence of SiO32- Impurity on the Optical Properties of KDP Crystal. , 2012, 31(1): 105-109.
2012, Vol. 31 
